Технічний опис APTGT200SK120G Microchip Technology
Description: IGBT MODULE 1200V 280A 890W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 280 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 890 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Інші пропозиції APTGT200SK120G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT200SK120G | Виробник : Microchip Technology |
 Description: IGBT MODULE 1200V 280A 890W SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 890 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
товару немає в наявності |
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| APTGT200SK120G | Виробник : Microchip / Microsemi |
IGBT Modules DOR CC6160 |
товару немає в наявності |
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| APTGT200SK120G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP6C |
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| APTGT200SK120G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Max. off-state voltage: 1.2kV Topology: buck chopper Case: SP6C Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Technology: Field Stop; Trench Application: motors |
товару немає в наявності |