на замовлення 4 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19468.15 грн |
| 10+ | 19189.26 грн |
| 25+ | 13825.6 грн |
| 100+ | 13493.12 грн |
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Технічний опис APTGT200TL60G Microchip Technology
Description: IGBT MODULE 600V 300A 652W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 652 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V.
Інші пропозиції APTGT200TL60G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT200TL60G | Виробник : Microchip Technology |
 Trans IGBT Module N-CH 600V 300A 652000mW 12-Pin Case SP-6 Tube |
товар відсутній |
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| APTGT200TL60G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 200A; SP6C; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 200A Case: SP6C Application: photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 5 шт |
товар відсутній |
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APTGT200TL60G | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 300A 652W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 652 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V |
товар відсутній |
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| APTGT200TL60G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 200A; SP6C; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 200A Case: SP6C Application: photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |