Технічний опис APTGT225DU170G MICROSEMI
Description: IGBT MODULE 1700V 340A 1250W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 340 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 20 nF @ 25 V.
Інші пропозиції APTGT225DU170G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT225DU170G | Microchip Technology |
 Description: IGBT MODULE 1700V 340A 1250W SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1250 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |
| APTGT225DU170G | Microchip / Microsemi |
IGBT Modules CC6207 |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |
| APTGT225DU170G | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Collector current: 225A Topology: IGBT x2 Type of semiconductor module: IGBT Power dissipation: 1.25kW Technology: Field Stop Mechanical mounting: screw Pulsed collector current: 450A Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Semiconductor structure: common emitter; transistor/transistor Case: SP6 Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. |
| APTGT225DU170G |
|
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 340A 1250W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MODULE 1700V 340A 1250W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTGT225DU170G |
|
Виробник: Microchip / Microsemi
IGBT Modules CC6207
IGBT Modules CC6207
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| APTGT225DU170G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Collector current: 225A
Topology: IGBT x2
Type of semiconductor module: IGBT
Power dissipation: 1.25kW
Technology: Field Stop
Mechanical mounting: screw
Pulsed collector current: 450A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: common emitter; transistor/transistor
Case: SP6
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Collector current: 225A
Topology: IGBT x2
Type of semiconductor module: IGBT
Power dissipation: 1.25kW
Technology: Field Stop
Mechanical mounting: screw
Pulsed collector current: 450A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: common emitter; transistor/transistor
Case: SP6
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.