Технічний опис APTGT25A120T1G Microchip Technology
Description: IGBT MODULE 1200V 40A 156W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 156 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V.
Інші пропозиції APTGT25A120T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT25A120T1G | Виробник : Microsemi Corporation |
 Description: IGBT MODULE 1200V 40A 156W SP1Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V |
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