Технічний опис APTGT300TL65G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; SP6C; screw, Topology: three-level inverter; single-phase, Application: photovoltaics, Mechanical mounting: screw, Case: SP6C, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Max. off-state voltage: 650V, Semiconductor structure: diode/transistor, Electrical mounting: FASTON connectors; screw, Technology: Field Stop; Trench, Type of semiconductor module: IGBT.
Інші пропозиції APTGT300TL65G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT300TL65G | Виробник : Microchip Technology |
 IGBT Modules PM-IGBT-TFS-SP6C |
товару немає в наявності |
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| APTGT300TL65G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; SP6C; screw Topology: three-level inverter; single-phase Application: photovoltaics Mechanical mounting: screw Case: SP6C Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Technology: Field Stop; Trench Type of semiconductor module: IGBT |
товару немає в наявності |