Технічний опис APTGT35A120T1G Microchip Technology
Description: IGBT MODULE 1200V 55A 208W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.
Інші пропозиції APTGT35A120T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT35A120T1G | Виробник : MICROCHIP TECHNOLOGY |
 APTGT35A120T1G IGBT modules |
товару немає в наявності |
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| APTGT35A120T1G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 55A 208W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 208 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
товару немає в наявності |
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| APTGT35A120T1G | Виробник : Microchip Technology |
IGBT Modules Trench Field Stop 1200V 55A 208W |
товару немає в наявності |