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APTGT35H120T1G Microsemi Corporation

APTGT35H120T1G.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 55A 208W SP1
Package / Case: SP1
Packaging: Bulk
Power - Max: 208 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
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Технічний опис APTGT35H120T1G Microsemi Corporation

Description: IGBT MODULE 1200V 55A 208W SP1, Package / Case: SP1, Packaging: Bulk, Power - Max: 208 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 55 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA.