APTGT35H120T3G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 14 шт
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Технічний опис APTGT35H120T3G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1200V 55A 208W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.
Інші пропозиції APTGT35H120T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT35H120T3G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 55A 208W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 208 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
товар відсутній |
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| APTGT35H120T3G | Виробник : Microchip / Microsemi |
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| APTGT35H120T3G | Виробник : Microchip Technology |
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| APTGT35H120T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |