APTGT400A120D3G MICROCHIP (MICROSEMI)


High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
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Технічний опис APTGT400A120D3G MICROCHIP (MICROSEMI)

Description: IGBT MODULE 1200V 580A 2100W D3, Packaging: Bulk, Package / Case: D-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: D3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 580 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2100 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 29 nF @ 25 V.

Інші пропозиції APTGT400A120D3G

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APTGT400A120D3G Виробник : MICROSEMI High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf D3POWER MODULE - IGBT
кількість в упаковці: 1 шт
товар відсутній
APTGT400A120D3G Виробник : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1200V 580A 2100W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: D3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 29 nF @ 25 V
товар відсутній
APTGT400A120D3G Виробник : Microsemi High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf IGBT Modules Power Module - IGBT
товар відсутній
APTGT400A120D3G Виробник : Microchip Technology mppgs00566_1-2275372.pdf IGBT Modules PM-IGBT-TFS-D3
товар відсутній
APTGT400A120D3G Виробник : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній