Технічний опис APTGT50A1202G Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP2, Packaging: Bulk, Package / Case: SP2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SP2, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 277 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V.
Інші пропозиції APTGT50A1202G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT50A1202G | Виробник : Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 277W SP2 Packaging: Bulk Package / Case: SP2 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP2 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 277 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V |
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