APTGT50A170T1G Microchip Technology

Description: IGBT MODULE 1700V 75A 312W SP1, Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 312 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 75 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.