APTGT50A170T1G Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT MODULE 1700V 75A 312W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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Технічний опис APTGT50A170T1G Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 312 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V.
Інші пропозиції APTGT50A170T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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APTGT50A170T1G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP1 |
товару немає в наявності |
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| APTGT50A170T1G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Gate-emitter voltage: ±20V Collector current: 50A Max. off-state voltage: 1.7kV Pulsed collector current: 100A Case: SP1 Technology: Field Stop; Trench Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Topology: IGBT half-bridge; NTC thermistor Application: motors Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |