APTGT50DDA60T3G MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor
Collector current: 50A
Case: SP3F
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Topology: boost chopper x2; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
кількість в упаковці: 19 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис APTGT50DDA60T3G MICROCHIP TECHNOLOGY
Description: IGBT MODULE 600V 80A 176W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Boost Chopper, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Інші пропозиції APTGT50DDA60T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT50DDA60T3G | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
товару немає в наявності |
||
| APTGT50DDA60T3G | Виробник : Microchip / Microsemi |
IGBT Modules DOR CC3175 |
товару немає в наявності |
||
| APTGT50DDA60T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Collector current: 50A Case: SP3F Gate-emitter voltage: ±20V Pulsed collector current: 100A Topology: boost chopper x2; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench |
товару немає в наявності |