Технічний опис APTGT50DH170TG Microchip Technology
Category: IGBT modules, Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: asymmetrical bridge; NTC thermistor, Max. off-state voltage: 1.7kV, Collector current: 50A, Case: SP4, Electrical mounting: FASTON connectors; soldering, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Technology: Field Stop; Trench, Mechanical mounting: screw, кількість в упаковці: 9 шт.
Інші пропозиції APTGT50DH170TG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT50DH170TG | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 50A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 9 шт |
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| APTGT50DH170TG | Виробник : Microchip Technology |
Description: IGBT MODULE 1700V 75A 312W SP4 |
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| APTGT50DH170TG | Виробник : Microchip / Microsemi |
IGBT Modules DOR CC4122 |
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| APTGT50DH170TG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 50A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |