Технічний опис APTGT50H120T3G Microchip Technology
Description: IGBT MODULE 1200V 75A 270W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 270 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V.
Інші пропозиції APTGT50H120T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT50H120T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 11 шт |
товар відсутній |
||
| APTGT50H120T3G | Виробник : MICROSEMI |
Full - Bridge Fast Trench + Field Stop IGBT Power Module APTGT50 кількість в упаковці: 1 шт |
товар відсутній |
||
 |
APTGT50H120T3G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 75A 270W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 270 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V |
товар відсутній |
|
| APTGT50H120T3G | Виробник : Microsemi |
 IGBT Modules Power Module - IGBT |
товар відсутній |
||
| APTGT50H120T3G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP3 |
товар відсутній |
||
| APTGT50H120T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |