APTGT50H170TG

APTGT50H170TG Microchip Technology


11007904-aptgt50h170tg-rev1-pdf.pdf Виробник: Microchip Technology
Trans IGBT Module N-CH 1700V 75A 312000mW 20-Pin Case SP-4 Tube
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис APTGT50H170TG Microchip Technology

Description: IGBT MODULE 1700V 75A 312W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 312 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V.

Інші пропозиції APTGT50H170TG

Фото Назва Виробник Інформація Доступність
Ціна
APTGT50H170TG Виробник : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 50A
Case: SP4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
кількість в упаковці: 6 шт
товару немає в наявності
В кошику  од. на суму  грн.
APTGT50H170TG Виробник : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
APTGT50H170TG Виробник : Microchip / Microsemi High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf IGBT Modules DOR CC4095
товару немає в наявності
В кошику  од. на суму  грн.
APTGT50H170TG Виробник : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 50A
Case: SP4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
товару немає в наявності
В кошику  од. на суму  грн.