Технічний опис APTGT50H60T1G Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Інші пропозиції APTGT50H60T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT50H60T1G | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 50A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 16 шт |
товар відсутній |
||
| APTGT50H60T1G | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
товар відсутній |
||
| APTGT50H60T1G | Виробник : Microchip Technology |
IGBT Modules DOR CC8040 |
товар відсутній |
||
| APTGT50H60T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 50A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |