Технічний опис APTGT50TA60PG Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP6P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Інші пропозиції APTGT50TA60PG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT50TA60PG | Виробник : MICROCHIP TECHNOLOGY |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 50A Collector current: 50A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 100A Topology: IGBT half-bridge x3 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench кількість в упаковці: 8 шт |
товару немає в наявності |
||
| APTGT50TA60PG | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
товару немає в наявності |
||
| APTGT50TA60PG | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
товару немає в наявності |
||
| APTGT50TA60PG | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 50A Collector current: 50A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 100A Topology: IGBT half-bridge x3 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench |
товару немає в наявності |