APTGT50TDU170PG

APTGT50TDU170PG Microchip Technology


11867914-aptgt50tdu170pg-rev1-pdf.pdf Виробник: Microchip Technology
Trans IGBT Module N-CH 1700V 70A 310000mW 21-Pin Case SP-6P Tube
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Технічний опис APTGT50TDU170PG Microchip Technology

Description: IGBT MODULE 1700V 70A 310W SP6P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 310 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V.

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APTGT50TDU170PG Виробник : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf APTGT50TDU170PG IGBT modules
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APTGT50TDU170PG Виробник : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1700V 70A 310W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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APTGT50TDU170PG Виробник : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf IGBT Modules DOR CC6527
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