Технічний опис APTGT50TDU60PG Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP6P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Інші пропозиції APTGT50TDU60PG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTGT50TDU60PG | Виробник : Microchip Technology |
 Description: IGBT MODULE 600V 80A 176W SP6PPackaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
товару немає в наявності |
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| APTGT50TDU60PG | Виробник : Microchip Technology |
IGBT Modules DOR CC6518 |
товару немає в наявності |
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| APTGT50TDU60PG | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Type of semiconductor module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x6 Max. off-state voltage: 0.6kV Collector current: 50A Case: SP6P Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw |
товару немає в наявності |