APTGT50TL601G Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4755.54 грн |
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Технічний опис APTGT50TL601G Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Інші пропозиції APTGT50TL601G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT50TL601G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 50A; SP1; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 100A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: SP1 Gate-emitter voltage: ±20V Collector current: 50A Topology: three-level inverter; single-phase кількість в упаковці: 16 шт |
товар відсутній |
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| APTGT50TL601G | Виробник : Microchip Technology |
IGBT Modules DOR CC8047 |
товар відсутній |
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| APTGT50TL601G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 50A; SP1; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 100A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: SP1 Gate-emitter voltage: ±20V Collector current: 50A Topology: three-level inverter; single-phase |
товар відсутній |