Технічний опис APTGT75DH120T3G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Case: SP3F, Mechanical mounting: screw, Collector current: 75A, Pulsed collector current: 175A, Type of semiconductor module: IGBT, Technology: Field Stop; Trench, Semiconductor structure: diode/transistor, Topology: asymmetrical bridge; NTC thermistor, Gate-emitter voltage: ±20V.
Інші пропозиції APTGT75DH120T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT75DH120T3G | Виробник : Microchip Technology |
 IGBT Modules PM-IGBT-TFS-SP3F |
товару немає в наявності |
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| APTGT75DH120T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Case: SP3F Mechanical mounting: screw Collector current: 75A Pulsed collector current: 175A Type of semiconductor module: IGBT Technology: Field Stop; Trench Semiconductor structure: diode/transistor Topology: asymmetrical bridge; NTC thermistor Gate-emitter voltage: ±20V |
товару немає в наявності |