APTGTQ200A65T3G Microchip Technology
Виробник: Microchip Technology
Description: IGBT MODULE 650V 200A 483W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3F
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 483 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
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Технічний опис APTGTQ200A65T3G Microchip Technology
Description: IGBT MODULE 650V 200A 483W SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: SP3F, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 483 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 12 nF @ 25 V.
Інші пропозиції APTGTQ200A65T3G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
APTGTQ200A65T3G | Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP3F |
товару немає в наявності |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. |
| APTGTQ200A65T3G | MICROCHIP TECHNOLOGY |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 120A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. |
| APTGTQ200A65T3G |
![]() |
Виробник: Microchip Technology
IGBT Modules PM-IGBT-TFS-SP3F
IGBT Modules PM-IGBT-TFS-SP3F
товару немає в наявності
Мінімальне замовлення: 7 шт
В кошику
од. на суму грн.
| APTGTQ200A65T3G |
![]() |
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 120A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 120A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.


