APTGTQ200A65T3G MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Application: motors
Case: SP3F
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис APTGTQ200A65T3G MICROCHIP TECHNOLOGY
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A, Application: motors, Case: SP3F, Max. off-state voltage: 650V, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 120A, Pulsed collector current: 400A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: Field Stop; Trench, Topology: IGBT half-bridge; NTC thermistor, Type of semiconductor module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції APTGTQ200A65T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGTQ200A65T3G | Виробник : Microchip Technology |
Description: IGBT MODULE 650V 200A 483W SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP3F Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 483 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 12 nF @ 25 V |
товару немає в наявності |
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APTGTQ200A65T3G | Виробник : Microchip Technology |
IGBT Modules CC3201 |
товару немає в наявності |
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| APTGTQ200A65T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Application: motors Case: SP3F Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 400A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT |
товару немає в наявності |