APTGTQ200A65T3G Microchip Technology

Description: IGBT MODULE 650V 200A 483W SP3F, Input Capacitance (Cies) @ Vce: 12 nF @ 25 V, Current - Collector Cutoff (Max): 200 µA, Power - Max: 483 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 200 A, Supplier Device Package: SP3F, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.