Технічний опис APTGV15H120T3G Microchip Technology
Description: IGBT MODULE 1200V 25A 115W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Trench Field Stop, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 115 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V.
Інші пропозиції APTGV15H120T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGV15H120T3G | Виробник : Microsemi Corporation |
 Description: IGBT MODULE 1200V 25A 115W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT, Trench Field Stop Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 115 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
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