APTGV15H120T3G Microsemi Corporation


APTGV15H120T3G.pdf Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 115W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 115 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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Технічний опис APTGV15H120T3G Microsemi Corporation

Description: IGBT MODULE 1200V 25A 115W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Trench Field Stop, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 115 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V.