Технічний опис APTGV30H60T3G Microchip Technology
Description: IGBT MODULE 600V 50A 90W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 90 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V.
Інші пропозиції APTGV30H60T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGV30H60T3G | Виробник : Microsemi Corporation |
 Description: IGBT MODULE 600V 50A 90W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT, Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 90 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
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