APTM100A13SCG Microchip Technology

Description: MOSFET 2N-CH 1000V 65A SP6, Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 5V @ 6mA, Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V, Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 65A, Drain to Source Voltage (Vdss): 1000V (1kV), Power - Max: 1250W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge).