APTM100H35FT3G Microchip Technology

Description: MOSFET 4N-CH 1000V 22A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 1000V (1kV), Current - Continuous Drain (Id) @ 25°C: 22A, Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V, Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP3.