Технічний опис APTM100H46FT3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1kV, Drain current: 14A, On-state resistance: 552mΩ, Power dissipation: 357W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: POWER MOS 8®, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Pulsed drain current: 120A, Case: SP3, кількість в упаковці: 1 шт.
Інші пропозиції APTM100H46FT3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APTM100H46FT3G | Виробник : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 552mΩ Power dissipation: 357W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 120A Case: SP3 кількість в упаковці: 1 шт |
товару немає в наявності |
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APTM100H46FT3G | Виробник : Microsemi Corporation |
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товару немає в наявності |
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APTM100H46FT3G | Виробник : Microchip Technology |
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товару немає в наявності |
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APTM100H46FT3G | Виробник : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 552mΩ Power dissipation: 357W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 120A Case: SP3 |
товару немає в наявності |