APTM100H80FT1G Microsemi Corporation
Виробник: Microsemi CorporationDescription: MOSFET 4N-CH 1000V 11A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 3876pF @ 25V
Rds On (Max) @ Id, Vgs: 960mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
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Технічний опис APTM100H80FT1G Microsemi Corporation
Description: MOSFET 4N-CH 1000V 11A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 1000V (1kV), Current - Continuous Drain (Id) @ 25°C: 11A, Input Capacitance (Ciss) (Max) @ Vds: 3876pF @ 25V, Rds On (Max) @ Id, Vgs: 960mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SP1.