Технічний опис APTM100TA35SCTPG Microchip Technology
Description: MOSFET 6N-CH 1000V 22A SP6-P, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 1000V (1kV), Current - Continuous Drain (Id) @ 25°C: 22A, Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V, Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP6-P.
Інші пропозиції APTM100TA35SCTPG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM100TA35SCTPG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A Case: SP6P Electrical mounting: Press-in PCB On-state resistance: 0.42Ω Pulsed drain current: 88A Power dissipation: 390W Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Mechanical mounting: screw Topology: NTC thermistor кількість в упаковці: 1 шт |
товару немає в наявності |
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| APTM100TA35SCTPG | Виробник : Microchip Technology |
Description: MOSFET 6N-CH 1000V 22A SP6-P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP6-P |
товару немає в наявності |
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| APTM100TA35SCTPG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
товару немає в наявності |
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| APTM100TA35SCTPG | Виробник : Microchip Technology |
Discrete Semiconductor Modules CC6538 |
товару немає в наявності |
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| APTM100TA35SCTPG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A Case: SP6P Electrical mounting: Press-in PCB On-state resistance: 0.42Ω Pulsed drain current: 88A Power dissipation: 390W Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Mechanical mounting: screw Topology: NTC thermistor |
товару немає в наявності |