APTM100UM45DAG Microchip Technology

Description: MOSFET N-CH 1000V 215A SP6, Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 5V @ 30mA, Power Dissipation (Max): 5000W (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 215A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.