Технічний опис APTM100UM60FAG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw, Technology: POWER MOS 7®, Case: SP6C, Drain-source voltage: 1kV, Drain current: 97A, On-state resistance: 70mΩ, Power dissipation: 2272W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±30V, Pulsed drain current: 516A, Semiconductor structure: single transistor, кількість в упаковці: 1 шт.
Інші пропозиції APTM100UM60FAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM100UM60FAG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw Technology: POWER MOS 7® Case: SP6C Drain-source voltage: 1kV Drain current: 97A On-state resistance: 70mΩ Power dissipation: 2272W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 516A Semiconductor structure: single transistor кількість в упаковці: 1 шт |
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| APTM100UM60FAG | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 1000V 129A SP6 |
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| APTM100UM60FAG | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC6090 |
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| APTM100UM60FAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw Technology: POWER MOS 7® Case: SP6C Drain-source voltage: 1kV Drain current: 97A On-state resistance: 70mΩ Power dissipation: 2272W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 516A Semiconductor structure: single transistor |
товар відсутній |