Технічний опис APTM100UM65DAG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1kV, Drain current: 110A, Case: SP6C, Electrical mounting: FASTON connectors; screw, On-state resistance: 78mΩ, Pulsed drain current: 580A, Power dissipation: 3.25kW, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APTM100UM65DAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTM100UM65DAG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 110A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 78mΩ Pulsed drain current: 580A Power dissipation: 3.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM100UM65DAG | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 |
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| APTM100UM65DAG | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules DOR CC6028 |
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| APTM100UM65DAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 110A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 78mΩ Pulsed drain current: 580A Power dissipation: 3.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |