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Технічний опис APTM100UM65SAG Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6, Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 5V @ 20mA, Power Dissipation (Max): 3250W (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.
Інші пропозиції APTM100UM65SAG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| APTM100UM65SAG | Microsemi |
 MOSFET N-Channel, 145A, 1000V, 65mOhm, -40...+150 Силові MOSFET-модулі |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
APTM100UM65SAG | Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 20mA Power Dissipation (Max): 3250W (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| APTM100UM65SAG |
|
Виробник: Microsemi
MOSFET N-Channel, 145A, 1000V, 65mOhm, -40...+150 Силові MOSFET-модулі
MOSFET N-Channel, 145A, 1000V, 65mOhm, -40...+150 Силові MOSFET-модулі
товару немає в наявності
В кошику
од. на суму грн.
| APTM100UM65SAG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.