Технічний опис APTM100UM65SCAVG Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V, Power Dissipation (Max): 3250W (Tc), Vgs(th) (Max) @ Id: 5V @ 20mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V.
Інші пропозиції APTM100UM65SCAVG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM100UM65SCAVG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A Electrical mounting: screw Topology: single transistor + series diode - parrallel diode Power dissipation: 3.25kW Gate-source voltage: ±30V Technology: POWER MOS 7®; SiC On-state resistance: 78mΩ Drain current: 110A Drain-source voltage: 1kV Semiconductor structure: SiC diode/transistor Type of module: MOSFET transistor Mechanical mounting: screw Case: SP6 Pulsed drain current: 580A кількість в упаковці: 1 шт |
товару немає в наявності |
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| APTM100UM65SCAVG | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Power Dissipation (Max): 3250W (Tc) Vgs(th) (Max) @ Id: 5V @ 20mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V |
товару немає в наявності |
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| APTM100UM65SCAVG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |
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| APTM100UM65SCAVG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-7-SBD-SP6 |
товару немає в наявності |
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| APTM100UM65SCAVG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A Electrical mounting: screw Topology: single transistor + series diode - parrallel diode Power dissipation: 3.25kW Gate-source voltage: ±30V Technology: POWER MOS 7®; SiC On-state resistance: 78mΩ Drain current: 110A Drain-source voltage: 1kV Semiconductor structure: SiC diode/transistor Type of module: MOSFET transistor Mechanical mounting: screw Case: SP6 Pulsed drain current: 580A |
товару немає в наявності |