Технічний опис APTM10DSKM09T3G Microchip Technology
Description: MOSFET 2N-CH 100V 139A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 139A, Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: SP3.
Інші пропозиції APTM10DSKM09T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTM10DSKM09T3G | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 100V 139A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP3 |
товару немає в наявності |
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| APTM10DSKM09T3G | Виробник : Microchip Technology |
 MOSFET Modules PM-MOSFET-5-SP3 |
товару немає в наявності |
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| APTM10DSKM09T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 430A Power dissipation: 390W Case: SP3 Gate-source voltage: ±30V On-state resistance: 10mΩ Type of semiconductor module: MOSFET transistor Technology: POWER MOS 5® Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Mechanical mounting: screw Topology: buck chopper x2; NTC thermistor |
товару немає в наявності |