Технічний опис APTM10DSKM19T3G Microchip Technology
Description: MOSFET 2N-CH 100V 70A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 70A, Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V, Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V, Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SP3.
Інші пропозиції APTM10DSKM19T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM10DSKM19T3G | Виробник : Microchip Technology |
 Description: MOSFET 2N-CH 100V 70A SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SP3 |
товару немає в наявності |
||
| APTM10DSKM19T3G | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-5-SP3 |
товару немає в наявності |
||
| APTM10DSKM19T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper x2; NTC thermistor Case: SP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Pulsed drain current: 300A Technology: POWER MOS 5® On-state resistance: 21mΩ Gate-source voltage: ±30V Drain current: 50A Drain-source voltage: 100V Power dissipation: 208W |
товару немає в наявності |