Технічний опис APTM10TAM09FPG Microchip Technology
Description: MOSFET 6N-CH 100V 139A SP6-P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 139A, Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: SP6-P.
Інші пропозиції APTM10TAM09FPG
| Фото | Назва | Виробник | Інформація |
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APTM10TAM09FPG | Виробник : Microchip Technology |
Description: MOSFET 6N-CH 100V 139A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP6-P |
товару немає в наявності |
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| APTM10TAM09FPG | Виробник : Microchip Technology | Discrete Semiconductor Modules DOR CC6509 |
товару немає в наявності |
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| APTM10TAM09FPG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 430A Power dissipation: 390W Case: SP6P Gate-source voltage: ±30V On-state resistance: 10mΩ Type of semiconductor module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: MOSFET x3 half-bridge |
товару немає в наявності |