APTM10TAM09FPG Microchip Technology

Description: MOSFET 6N-CH 100V 139A SP6-P, Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V, Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 139A, Drain to Source Voltage (Vdss): 100V, Power - Max: 390W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 6 N-Channel (3-Phase Bridge), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk, Supplier Device Package: SP6-P, Vgs(th) (Max) @ Id: 4V @ 2.5mA.