Технічний опис APTM120DA30CT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 23A, Case: SP1, Topology: boost chopper; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 0.36Ω, Pulsed drain current: 195A, Power dissipation: 657W, Technology: POWER MOS 8®; SiC, Mechanical mounting: screw, Gate-source voltage: ±30V.
Інші пропозиції APTM120DA30CT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM120DA30CT1G | Виробник : Microchip Technology |
 Discrete Semiconductor Modules PM-MOSFET-8-SBD-SP1 |
товару немає в наявності |
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| APTM120DA30CT1G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8®; SiC Mechanical mounting: screw Gate-source voltage: ±30V |
товару немає в наявності |