APTM120H140FT1G Microchip Technology

Description: MOSFET 4N-CH 1200V 8A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V, Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SP1.