Технічний опис APTM120H29FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W, On-state resistance: 348mΩ, Drain current: 25A, Drain-source voltage: 1.2kV, Semiconductor structure: transistor/transistor, Power dissipation: 780W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Case: SP6C, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: H-bridge, Pulsed drain current: 136A, Type of semiconductor module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції APTM120H29FG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM120H29FG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W On-state resistance: 348mΩ Drain current: 25A Drain-source voltage: 1.2kV Semiconductor structure: transistor/transistor Power dissipation: 780W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 136A Type of semiconductor module: MOSFET transistor кількість в упаковці: 1 шт |
товару немає в наявності |
||
 |
APTM120H29FG | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 1200V 34A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 780W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товару немає в наявності |
|
| APTM120H29FG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-FREDFET-7-SP6C |
товару немає в наявності |
||
| APTM120H29FG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W On-state resistance: 348mΩ Drain current: 25A Drain-source voltage: 1.2kV Semiconductor structure: transistor/transistor Power dissipation: 780W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 136A Type of semiconductor module: MOSFET transistor |
товару немає в наявності |