Технічний опис APTM120U10SAG Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V, Power Dissipation (Max): 3290W (Tc), Vgs(th) (Max) @ Id: 5V @ 20mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V.
Інші пропозиції APTM120U10SAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTM120U10SAG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw On-state resistance: 0.12Ω Drain current: 86A Drain-source voltage: 1.2kV Semiconductor structure: diode/transistor Power dissipation: 3.29kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Pulsed drain current: 464A Type of semiconductor module: MOSFET transistor кількість в упаковці: 1 шт |
товару немає в наявності |
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APTM120U10SAG | Виробник : Microchip Technology |
Description: MOSFET N-CH 1200V 116A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V Power Dissipation (Max): 3290W (Tc) Vgs(th) (Max) @ Id: 5V @ 20mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V |
товару немає в наявності |
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| APTM120U10SAG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-7-SP6C |
товару немає в наявності |
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| APTM120U10SAG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw On-state resistance: 0.12Ω Drain current: 86A Drain-source voltage: 1.2kV Semiconductor structure: diode/transistor Power dissipation: 3.29kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Pulsed drain current: 464A Type of semiconductor module: MOSFET transistor |
товару немає в наявності |