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APTM120UM95FAG Microsemi Corporation

aptm120um95fag-rev1.pdf Виробник: Microsemi Corporation
Description: MOSFET N-CH 1200V 103A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 51.5A, 10V
Power Dissipation (Max): 2272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 1122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30900 pF @ 25 V
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Технічний опис APTM120UM95FAG Microsemi Corporation

Description: MOSFET N-CH 1200V 103A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), Rds On (Max) @ Id, Vgs: 114mOhm @ 51.5A, 10V, Power Dissipation (Max): 2272W (Tc), Vgs(th) (Max) @ Id: 5V @ 15mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 1122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 30900 pF @ 25 V.