Технічний опис APTM20AM08FTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V, Type of semiconductor module: MOSFET transistor, Case: SP4, On-state resistance: 10mΩ, Gate-source voltage: ±30V, Drain-source voltage: 200V, Drain current: 155A, Power dissipation: 781W, Pulsed drain current: 832A, Technology: FREDFET; POWER MOS 7®, Topology: MOSFET half-bridge; NTC thermistor, Semiconductor structure: diode/transistor, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw.
Інші пропозиції APTM20AM08FTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTM20AM08FTG | Виробник : Microchip Technology |
 Description: MOSFET 2N-CH 200V 208A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
товару немає в наявності |
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| APTM20AM08FTG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-FREDFET-7-SP4 |
товару немає в наявності |
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| APTM20AM08FTG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V Type of semiconductor module: MOSFET transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 155A Power dissipation: 781W Pulsed drain current: 832A Technology: FREDFET; POWER MOS 7® Topology: MOSFET half-bridge; NTC thermistor Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |