Технічний опис APTM20DUM08TG Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 781W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 208A, Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V, Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP4, Part Status: Active.
Інші пропозиції APTM20DUM08TG
| Фото | Назва | Виробник | Інформація |
Доступність |
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| APTM20DUM08TG | Виробник : Microchip Technology |
 Description: MOSFET 2N-CH 200V 208A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Part Status: Active |
товару немає в наявності |
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| APTM20DUM08TG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP4 |
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| APTM20DUM08TG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 155A; SP4 Type of semiconductor module: MOSFET transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 155A Power dissipation: 781W Pulsed drain current: 832A Technology: POWER MOS 7® Topology: MOSFET x2; NTC thermistor Semiconductor structure: common source; transistor/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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