Технічний опис APTM20HM08FG Microchip Technology
Description: MOSFET 4N-CH 200V 208A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 781W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 208A, Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V, Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP6.
Інші пропозиції APTM20HM08FG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM20HM08FG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W Drain current: 155A On-state resistance: 10mΩ Power dissipation: 781W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 832A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V кількість в упаковці: 1 шт |
товару немає в наявності |
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| APTM20HM08FG | Виробник : MICROSEMI |
SP6/208 A, 200 V, 0.01 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER,MOSFET APTM20HM08 кількість в упаковці: 1 шт |
товару немає в наявності |
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| APTM20HM08FG | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 200V 208A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товару немає в наявності |
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| APTM20HM08FG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-FREDFET-7-SP6C |
товару немає в наявності |
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| APTM20HM08FG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W Drain current: 155A On-state resistance: 10mΩ Power dissipation: 781W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 832A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V |
товару немає в наявності |