Технічний опис APTM20SKM08TG Microchip Technology
Description: MOSFET N-CH 200V 208A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 208A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V, Power Dissipation (Max): 781W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V.
Інші пропозиції APTM20SKM08TG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTM20SKM08TG | Виробник : Microchip Technology |
 Description: MOSFET N-CH 200V 208A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 208A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Power Dissipation (Max): 781W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
товару немає в наявності |
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| APTM20SKM08TG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP4 |
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| APTM20SKM08TG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V Type of semiconductor module: MOSFET transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 155A Power dissipation: 781W Pulsed drain current: 832A Technology: POWER MOS 7® Topology: buck chopper; NTC thermistor Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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