Технічний опис APTM20TAM16FPG Microchip Technology
Description: MOSFET 6N-CH 200V 104A SP6-P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 104A, Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V, Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V, Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP6-P.
Інші пропозиції APTM20TAM16FPG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM20TAM16FPG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 19mΩ Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 416A кількість в упаковці: 1 шт |
товару немає в наявності |
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APTM20TAM16FPG | Виробник : Microchip Technology |
Description: MOSFET 6N-CH 200V 104A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP6-P |
товару немає в наявності |
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| APTM20TAM16FPG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-FREDFET-7-SP6P |
товару немає в наявності |
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| APTM20TAM16FPG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 19mΩ Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 416A |
товару немає в наявності |