APTM20UM04SAG Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 200V 417A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V
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Технічний опис APTM20UM04SAG Microchip Technology
Description: MOSFET N-CH 200V 417A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 417A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V.
Інші пропозиції APTM20UM04SAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM20UM04SAG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP6C |
товару немає в наявності |