APTM20UM09SG Microsemi Corporation

Description: MOSFET N-CH 200V 195A MODULE, Packaging: Bulk, Package / Case: J3 Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 74.5A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: Module, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 217 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V.