Технічний опис APTM50AM35FTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 500V; 74A; SP4; Idm: 396A; 781W, Drain-source voltage: 500V, Drain current: 74A, Pulsed drain current: 396A, Power dissipation: 781W, Case: SP4, Gate-source voltage: ±30V, On-state resistance: 39mΩ, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: FREDFET; POWER MOS 7®, Topology: MOSFET half-bridge; NTC thermistor, Semiconductor structure: transistor/transistor, кількість в упаковці: 1 шт.
Інші пропозиції APTM50AM35FTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTM50AM35FTG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 500V; 74A; SP4; Idm: 396A; 781W Drain-source voltage: 500V Drain current: 74A Pulsed drain current: 396A Power dissipation: 781W Case: SP4 Gate-source voltage: ±30V On-state resistance: 39mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Topology: MOSFET half-bridge; NTC thermistor Semiconductor structure: transistor/transistor кількість в упаковці: 1 шт |
товару немає в наявності |
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APTM50AM35FTG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 500V 99A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
товару немає в наявності |
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| APTM50AM35FTG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
товару немає в наявності |
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| APTM50AM35FTG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 74A; SP4; Idm: 396A; 781W Drain-source voltage: 500V Drain current: 74A Pulsed drain current: 396A Power dissipation: 781W Case: SP4 Gate-source voltage: ±30V On-state resistance: 39mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Topology: MOSFET half-bridge; NTC thermistor Semiconductor structure: transistor/transistor |
товару немає в наявності |