Технічний опис APTM50AM35FTG Microchip Technology
Description: MOSFET 2N-CH 500V 99A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 781W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 99A, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP4.
Інші пропозиції APTM50AM35FTG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| APTM50AM35FTG | Виробник : MICROCHIP (MICROSEMI) |
 APTM50AM35FTG Transistor modules MOSFET |
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APTM50AM35FTG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 500V 99A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
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| APTM50AM35FTG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
товар відсутній |